Williams RS - Search Results

1

Electro-Thermal Characterization of Dynamical VO₂ Memristors via Local Activity Modeling.

Brown TD, Bohaichuk SM, Islam M, Kumar S, Pop E, Williams RS. Brown TD, et al. Among authors: williams rs. Adv Mater. 2023 Sep;35(37):e2205451. doi: 10.1002/adma.202205451. Epub 2022 Nov 3. Adv Mater. 2023. PMID: 36165218

2

Ultrasmooth silver thin films deposited with a germanium nucleation layer.

Logeeswaran Vj, Kobayashi NP, Islam MS, Wu W, Chaturvedi P, Fang NX, Wang SY, Williams RS. Logeeswaran Vj, et al. Among authors: williams rs. Nano Lett. 2009 Jan;9(1):178-82. doi: 10.1021/nl8027476. Nano Lett. 2009. PMID: 19105737

3

Local temperature redistribution and structural transition during joule-heating-driven conductance switching in VO2.

Kumar S, Pickett MD, Strachan JP, Gibson G, Nishi Y, Williams RS. Kumar S, et al. Among authors: williams rs. Adv Mater. 2013 Nov 13;25(42):6128-32. doi: 10.1002/adma.201302046. Epub 2013 Jul 19. Adv Mater. 2013. PMID: 23868142 Free article.

4

Sequential electronic and structural transitions in VO2 observed using X-ray absorption spectromicroscopy.

Kumar S, Strachan JP, Pickett MD, Bratkovsky A, Nishi Y, Williams RS. Kumar S, et al. Among authors: williams rs. Adv Mater. 2014 Nov 26;26(44):7505-9. doi: 10.1002/adma.201402404. Epub 2014 Oct 15. Adv Mater. 2014. PMID: 25319233

5

Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors.

Kumar S, Graves CE, Strachan JP, Grafals EM, Kilcoyne AL, Tyliszczak T, Weker JN, Nishi Y, Williams RS. Kumar S, et al. Among authors: williams rs. Adv Mater. 2016 Apr 13;28(14):2772-6. doi: 10.1002/adma.201505435. Epub 2016 Feb 2. Adv Mater. 2016. PMID: 26833926

6

Conduction Channel Formation and Dissolution Due to Oxygen Thermophoresis/Diffusion in Hafnium Oxide Memristors.

Kumar S, Wang Z, Huang X, Kumari N, Davila N, Strachan JP, Vine D, Kilcoyne AL, Nishi Y, Williams RS. Kumar S, et al. Among authors: williams rs. ACS Nano. 2016 Dec 27;10(12):11205-11210. doi: 10.1021/acsnano.6b06275. Epub 2016 Dec 13. ACS Nano. 2016. PMID: 27957851

7

Chaotic dynamics in nanoscale NbO₂ Mott memristors for analogue computing.

Kumar S, Strachan JP, Williams RS. Kumar S, et al. Among authors: williams rs. Nature. 2017 Aug 17;548(7667):318-321. doi: 10.1038/nature23307. Epub 2017 Aug 9. Nature. 2017. PMID: 28792931

8

Physical origins of current and temperature controlled negative differential resistances in NbO₂.

Kumar S, Wang Z, Davila N, Kumari N, Norris KJ, Huang X, Strachan JP, Vine D, Kilcoyne ALD, Nishi Y, Williams RS. Kumar S, et al. Among authors: williams rs. Nat Commun. 2017 Sep 22;8(1):658. doi: 10.1038/s41467-017-00773-4. Nat Commun. 2017. PMID: 28939848 Free PMC article.

9

Separation of current density and electric field domains caused by nonlinear electronic instabilities.

Kumar S, Williams RS. Kumar S, et al. Among authors: williams rs. Nat Commun. 2018 May 23;9(1):2030. doi: 10.1038/s41467-018-04452-w. Nat Commun. 2018. PMID: 29795115 Free PMC article.

10

Fast Spiking of a Mott VO₂-Carbon Nanotube Composite Device.

Bohaichuk SM, Kumar S, Pitner G, McClellan CJ, Jeong J, Samant MG, Wong HP, Parkin SSP, Williams RS, Pop E. Bohaichuk SM, et al. Among authors: williams rs. Nano Lett. 2019 Oct 9;19(10):6751-6755. doi: 10.1021/acs.nanolett.9b01554. Epub 2019 Aug 28. Nano Lett. 2019. PMID: 31433663

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