Shin C - Search Results

1

Experimental study of endurance characteristics of Al-doped HfO₂ferroelectric capacitor.

Choi Y, Shin J, Moon S, Min J, Han C, Shin C. Choi Y, et al. Among authors: shin c, shin j. Nanotechnology. 2023 Feb 17;34(18). doi: 10.1088/1361-6528/acb7fc. Nanotechnology. 2023. PMID: 36724507

2

Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors.

Ko E, Shin J, Shin C. Ko E, et al. Among authors: shin c, shin j. Nano Converg. 2018;5(1):2. doi: 10.1186/s40580-018-0135-4. Epub 2018 Jan 28. Nano Converg. 2018. PMID: 29399434 Free PMC article. Review.

3

Impact of Ferroelectric Capacitor's Electrode Area on the Performance of Negative Capacitance Field Effect Transistor.

Cho H, Shin J, Shin C. Cho H, et al. Among authors: shin c, shin j. J Nanosci Nanotechnol. 2019 Oct 1;19(10):6087-6090. doi: 10.1166/jnn.2019.16991. J Nanosci Nanotechnol. 2019. PMID: 31026913

4

Process-Induced Random Variation: Work-Function Variation in Stacked Nanowire Field Effect Transistor.

Park J, Shin C. Park J, et al. Among authors: shin c. J Nanosci Nanotechnol. 2019 Oct 1;19(10):6091-6094. doi: 10.1166/jnn.2019.16993. J Nanosci Nanotechnol. 2019. PMID: 31026914

5

Steep Slope Silicon-on-Insulator Field Effect Transistor with Negative Capacitance: Analysis on Hysteresis.

Ko E, Shin J, Shin C. Ko E, et al. Among authors: shin c, shin j. J Nanosci Nanotechnol. 2019 Oct 1;19(10):6128-6130. doi: 10.1166/jnn.2019.16990. J Nanosci Nanotechnol. 2019. PMID: 31026921

6

Investigation on Threshold Voltage Adjustment of Threshold Switching Devices with HfO₂/Al₂O₃ Superlattice on Transparent ITO/Glass Substrate.

Choi Y, Shin J, Moon S, Shin C. Choi Y, et al. Among authors: shin c, shin j. Micromachines (Basel). 2020 May 21;11(5):525. doi: 10.3390/mi11050525. Micromachines (Basel). 2020. PMID: 32455725 Free PMC article.

7

Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor.

Yoon C, Moon S, Shin C. Yoon C, et al. Among authors: shin c. Nano Converg. 2020 Jun 1;7(1):19. doi: 10.1186/s40580-020-00230-x. Nano Converg. 2020. PMID: 32483648 Free PMC article.

8

Experimental study of threshold voltage shift for Si:HfO₂based ferroelectric field effect transistor.

Jung T, Shin C. Jung T, et al. Among authors: shin c. Nanotechnology. 2021 Jun 24;32(37). doi: 10.1088/1361-6528/ac08bc. Nanotechnology. 2021. PMID: 34098542

9

Impact of Chamber/Annealing Temperature on the Endurance Characteristic of Zr:HfO₂ Ferroelectric Capacitor.

Choi Y, Han C, Shin J, Moon S, Min J, Park H, Eom D, Lee J, Shin C. Choi Y, et al. Among authors: shin c, shin j. Sensors (Basel). 2022 May 27;22(11):4087. doi: 10.3390/s22114087. Sensors (Basel). 2022. PMID: 35684705 Free PMC article.

10

Vertical Gate-All-Around Device Architecture to Improve the Device Performance for Sub-5-nm Technology.

Noh C, Han C, Won SM, Shin C. Noh C, et al. Among authors: shin c. Micromachines (Basel). 2022 Sep 19;13(9):1551. doi: 10.3390/mi13091551. Micromachines (Basel). 2022. PMID: 36144174 Free PMC article.

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