Zhang T - Search Results

1

In Situ Monitoring of the Spatial Distribution of Oxygen Vacancies and Enhanced Photocatalytic Performance at the Single-Particle Level.

Zhang Y, Liu Y, Zhang T, Gong X, Wang Z, Liu Y, Wang P, Cheng H, Dai Y, Huang B, Zheng Z. Zhang Y, et al. Among authors: zhang t. Nano Lett. 2023 Feb 22;23(4):1244-1251. doi: 10.1021/acs.nanolett.2c04313. Epub 2023 Feb 9. Nano Lett. 2023. PMID: 36757119

2

Nonmetal-Atom-Doping-Induced Valley Polarization in Single-Layer Tl₂O.

Xu X, Ma Y, Zhang T, Lei C, Huang B, Dai Y. Xu X, et al. Among authors: zhang t. J Phys Chem Lett. 2019 Aug 15;10(16):4535-4541. doi: 10.1021/acs.jpclett.9b01602. Epub 2019 Jul 29. J Phys Chem Lett. 2019. PMID: 31342751

3

Spontaneous Valley Polarization and Electrical Control of Valley Physics in Single-Layer TcIrGe₂S₆.

Zhao J, Zhang T, Peng R, Dai Y, Huang B, Ma Y. Zhao J, et al. Among authors: zhang t. J Phys Chem Lett. 2022 Sep 22;13(37):8749-8754. doi: 10.1021/acs.jpclett.2c02492. Epub 2022 Sep 13. J Phys Chem Lett. 2022. PMID: 36099039

4

Two-Dimensional Penta-BN₂ with High Specific Capacity for Li-Ion Batteries.

Zhang T, Ma Y, Huang B, Dai Y. Zhang T, et al. ACS Appl Mater Interfaces. 2019 Feb 13;11(6):6104-6110. doi: 10.1021/acsami.8b20566. Epub 2019 Jan 29. ACS Appl Mater Interfaces. 2019. PMID: 30648381

5

Two-Dimensional Ferroelastic Semiconductors in Nb₂SiTe₄ and Nb₂GeTe₄ with Promising Electronic Properties.

Zhang T, Ma Y, Xu X, Lei C, Huang B, Dai Y. Zhang T, et al. J Phys Chem Lett. 2020 Jan 16;11(2):497-503. doi: 10.1021/acs.jpclett.9b03433. Epub 2020 Jan 6. J Phys Chem Lett. 2020. PMID: 31885269

6

Valley-Contrasting Physics in Single-Layer CrSi₂N₄ and CrSi₂P₄.

Liu Y, Zhang T, Dou K, Du W, Peng R, Dai Y, Huang B, Ma Y. Liu Y, et al. Among authors: zhang t. J Phys Chem Lett. 2021 Sep 2;12(34):8341-8346. doi: 10.1021/acs.jpclett.1c02069. Epub 2021 Aug 25. J Phys Chem Lett. 2021. PMID: 34431679

7

Prediction of two-dimensional PC₆ as a promising anode material for potassium-ion batteries.

Dou K, Ma Y, Zhang T, Huang B, Dai Y. Dou K, et al. Among authors: zhang t. Phys Chem Chem Phys. 2019 Dec 21;21(47):26212-26218. doi: 10.1039/c9cp05251h. Epub 2019 Nov 25. Phys Chem Chem Phys. 2019. PMID: 31761909

8

Prediction of two-dimensional antiferromagnetic ferroelasticity in an AgF₂ monolayer.

Xu X , Ma Y , Zhang T , Lei C , Huang B , Dai Y . Xu X , et al. Among authors: zhang t. Nanoscale Horiz. 2020 Oct 1;5(10):1386-1393. doi: 10.1039/d0nh00362j. Epub 2020 Jul 13. Nanoscale Horiz. 2020. PMID: 32657296

9

Layer-polarized anomalous Hall effects in valleytronic van der Waals bilayers.

Zhang T, Xu X, Huang B, Dai Y, Kou L, Ma Y. Zhang T, et al. Mater Horiz. 2023 Feb 6;10(2):483-490. doi: 10.1039/d2mh00906d. Mater Horiz. 2023. PMID: 36196974

10

Defect-engineered three-dimensional vanadium diselenide microflowers/nanosheets on carbon cloth by chemical vapor deposition for high-performance hydrogen evolution reaction.

Miao C, Zhang T, Li F, Zhang L, Sun J, Liu D, Wu L, Wang H, Chen F, He L, Han N, Ma Y, Dai Y, Yang ZX. Miao C, et al. Among authors: zhang l, zhang t. Nanotechnology. 2021 Apr 13;32(26). doi: 10.1088/1361-6528/abecb8. Nanotechnology. 2021. PMID: 33684904

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