Shen B - Search Results

1

Determination of the preferred epitaxy for III-nitride semiconductors on wet-transferred graphene.

Liu F, Wang T, Gao X, Yang H, Zhang Z, Guo Y, Yuan Y, Huang Z, Tang J, Sheng B, Chen Z, Liu K, Shen B, Li XZ, Peng H, Wang X. Liu F, et al. Among authors: shen b. Sci Adv. 2023 Aug 2;9(31):eadf8484. doi: 10.1126/sciadv.adf8484. Epub 2023 Aug 2. Sci Adv. 2023. PMID: 37531436 Free PMC article.

2

Identification of helicity-dependent photocurrents from topological surface states in Bi2Se3 gated by ionic liquid.

Duan J, Tang N, He X, Yan Y, Zhang S, Qin X, Wang X, Yang X, Xu F, Chen Y, Ge W, Shen B. Duan J, et al. Among authors: shen b. Sci Rep. 2014 May 8;4:4889. doi: 10.1038/srep04889. Sci Rep. 2014. PMID: 24809330 Free PMC article.

3

Evidence of type-II band alignment in III-nitride semiconductors: experimental and theoretical investigation for In 0.17 Al 0.83 N/GaN heterostructures.

Wang J, Xu F, Zhang X, An W, Li XZ, Song J, Ge W, Tian G, Lu J, Wang X, Tang N, Yang Z, Li W, Wang W, Jin P, Chen Y, Shen B. Wang J, et al. Among authors: shen b. Sci Rep. 2014 Oct 6;4:6521. doi: 10.1038/srep06521. Sci Rep. 2014. PMID: 25283334 Free PMC article.

4

Lattice-Polarity-Driven Epitaxy of Hexagonal Semiconductor Nanowires.

Wang P, Yuan Y, Zhao C, Wang X, Zheng X, Rong X, Wang T, Sheng B, Wang Q, Zhang Y, Bian L, Yang X, Xu F, Qin Z, Li X, Zhang X, Shen B. Wang P, et al. Among authors: shen b. Nano Lett. 2016 Feb 10;16(2):1328-34. doi: 10.1021/acs.nanolett.5b04726. Epub 2016 Jan 6. Nano Lett. 2016. PMID: 26694227

5

Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system.

He C, Qin Z, Xu F, Zhang L, Wang J, Hou M, Zhang S, Wang X, Ge W, Shen B. He C, et al. Among authors: shen b. Sci Rep. 2016 Apr 26;6:25124. doi: 10.1038/srep25124. Sci Rep. 2016. PMID: 27112969 Free PMC article.

6

High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure.

Rong X, Wang X, Ivanov SV, Jiang X, Chen G, Wang P, Wang W, He C, Wang T, Schulz T, Albrecht M, Jmerik VN, Toropov AA, Ratnikov VV, Kozlovsky VI, Martovitsky VP, Jin P, Xu F, Yang X, Qin Z, Ge W, Shi J, Shen B. Rong X, et al. Among authors: shen b. Adv Mater. 2016 Sep;28(36):7978-7983. doi: 10.1002/adma.201600990. Epub 2016 Jul 6. Adv Mater. 2016. PMID: 27383739

7

High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography.

Zhang L, Xu F, Wang J, He C, Guo W, Wang M, Sheng B, Lu L, Qin Z, Wang X, Shen B. Zhang L, et al. Among authors: shen b. Sci Rep. 2016 Nov 4;6:35934. doi: 10.1038/srep35934. Sci Rep. 2016. PMID: 27812006 Free PMC article.

8

Edge Dislocations Triggered Surface Instability in Tensile Epitaxial Hexagonal Nitride Semiconductor.

Cheng J, Yang X, Zhang J, Hu A, Ji P, Feng Y, Guo L, He C, Zhang L, Xu F, Tang N, Wang X, Shen B. Cheng J, et al. Among authors: shen b. ACS Appl Mater Interfaces. 2016 Dec 14;8(49):34108-34114. doi: 10.1021/acsami.6b11124. Epub 2016 Dec 1. ACS Appl Mater Interfaces. 2016. PMID: 27960395

9

High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition.

Wang J, Xu F, He C, Zhang L, Lu L, Wang X, Qin Z, Shen B. Wang J, et al. Among authors: shen b. Sci Rep. 2017 Feb 21;7:42747. doi: 10.1038/srep42747. Sci Rep. 2017. PMID: 28220829 Free PMC article.

10

Enhanced Hydrogen Detection Based on Mg-Doped InN Epilayer.

Wang S, Wang X, Chen Z, Wang P, Qi Q, Zheng X, Sheng B, Liu H, Wang T, Rong X, Li M, Zhang J, Yang X, Xu F, Shen B. Wang S, et al. Among authors: shen b. Sensors (Basel). 2018 Jun 28;18(7):2065. doi: 10.3390/s18072065. Sensors (Basel). 2018. PMID: 29958432 Free PMC article.

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