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Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization.
Mukherjee K, De Santi C, Borga M, Geens K, You S, Bakeroot B, Decoutere S, Diehle P, Hübner S, Altmann F, Buffolo M, Meneghesso G, Zanoni E, Meneghini M. Mukherjee K, et al. Among authors: bakeroot b. Materials (Basel). 2021 Apr 29;14(9):2316. doi: 10.3390/ma14092316. Materials (Basel). 2021. PMID: 33946943 Free PMC article. Review.
Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs.
Wang J, Chen Z, You S, Bakeroot B, Liu J, Decoutere S. Wang J, et al. Among authors: bakeroot b. Micromachines (Basel). 2021 Feb 15;12(2):199. doi: 10.3390/mi12020199. Micromachines (Basel). 2021. PMID: 33671856 Free PMC article.