Shong B - Search Results

1

Conversion of Layered WS₂ Crystals into Mixed-Domain Electrochemical Catalysts by Plasma-Assisted Surface Reconstruction.

Park J, Cho I, Jeon H, Lee Y, Zhang J, Lee D, Cho MK, Preston DJ, Shong B, Kim IS, Lee WK. Park J, et al. Among authors: shong b. Adv Mater. 2024 Jun;36(25):e2314031. doi: 10.1002/adma.202314031. Epub 2024 Apr 3. Adv Mater. 2024. PMID: 38509794

2

Tailoring Subthreshold Swing in A-IGZO Thin-Film Transistors for Amoled Displays: Impact of Conversion Mechanism on Peald Deposition Sequences.

Yoon SH, Cho JH, Cho I, Kim MJ, Hur JS, Bang SW, Lee HJ, Bae JU, Kim J, Shong B, Jeong JK. Yoon SH, et al. Among authors: shong b. Small Methods. 2024 Aug;8(8):e2301185. doi: 10.1002/smtd.202301185. Epub 2024 Jan 8. Small Methods. 2024. PMID: 38189565

3

Machine learning-based exploration of molecular design descriptors for area-selective atomic layer deposition (AS-ALD) precursors.

Ngoc Van TT, Kim C, Lee H, Kim J, Shong B. Ngoc Van TT, et al. Among authors: shong b. J Mol Model. 2023 Dec 14;30(1):10. doi: 10.1007/s00894-023-05806-y. J Mol Model. 2023. PMID: 38093140

4

Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of In₂O₃ and Application to High-Performance Field-Effect Transistors.

Lee HY, Hur JS, Cho I, Choi CH, Yoon SH, Kwon Y, Shong B, Jeong JK. Lee HY, et al. Among authors: shong b. ACS Appl Mater Interfaces. 2023 Oct 25. doi: 10.1021/acsami.3c11796. Online ahead of print. ACS Appl Mater Interfaces. 2023. PMID: 37877895

5

Low-temperature growth of MoS₂ on polymer and thin glass substrates for flexible electronics.

Hoang AT, Hu L, Kim BJ, Van TTN, Park KD, Jeong Y, Lee K, Ji S, Hong J, Katiyar AK, Shong B, Kim K, Im S, Chung WJ, Ahn JH. Hoang AT, et al. Among authors: shong b. Nat Nanotechnol. 2023 Dec;18(12):1439-1447. doi: 10.1038/s41565-023-01460-w. Epub 2023 Jul 27. Nat Nanotechnol. 2023. PMID: 37500777

6

Atomic Layer Deposition Route to Scalable, Electronic-Grade van der Waals Te Thin Films.

Kim C, Hur N, Yang J, Oh S, Yeo J, Jeong HY, Shong B, Suh J. Kim C, et al. Among authors: shong b. ACS Nano. 2023 Aug 22;17(16):15776-15786. doi: 10.1021/acsnano.3c03559. Epub 2023 Jul 11. ACS Nano. 2023. PMID: 37432767

7

Publisher Correction: Gradient area-selective deposition for seamless gap-filling in 3D nanostructures through surface chemical reactivity control.

Nguyen CT, Cho EH, Gu B, Lee S, Kim HS, Park J, Yu NK, Shin S, Shong B, Lee JY, Lee HB. Nguyen CT, et al. Among authors: shong b. Nat Commun. 2023 Jan 12;14(1):184. doi: 10.1038/s41467-023-35883-9. Nat Commun. 2023. PMID: 36635326 Free PMC article. No abstract available.

8

Gradient area-selective deposition for seamless gap-filling in 3D nanostructures through surface chemical reactivity control.

Nguyen CT, Cho EH, Gu B, Lee S, Kim HS, Park J, Yu NK, Shin S, Shong B, Lee JY, Lee HB. Nguyen CT, et al. Among authors: shong b. Nat Commun. 2022 Dec 9;13(1):7597. doi: 10.1038/s41467-022-35428-6. Nat Commun. 2022. PMID: 36494441 Free PMC article.

9

Commensurate Assembly of C₆₀ on Black Phosphorus for Mixed-Dimensional van der Waals Transistors.

Yun TK, Lee Y, Kim MJ, Park J, Kang D, Kim S, Choi YJ, Yi Y, Shong B, Cho JH, Kim K. Yun TK, et al. Among authors: shong b. Small. 2022 Mar;18(10):e2105916. doi: 10.1002/smll.202105916. Epub 2022 Jan 12. Small. 2022. PMID: 35018707

10

Growth modulation of atomic layer deposition of HfO₂ by combinations of H₂O and O₃ reactants.

Ko BG, Nguyen CT, Gu B, Khan MR, Park K, Oh H, Park J, Shong B, Lee HB. Ko BG, et al. Among authors: shong b. Dalton Trans. 2021 Dec 14;50(48):17935-17944. doi: 10.1039/d1dt03465k. Dalton Trans. 2021. PMID: 34821888

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