Ji YJ - Search Results

1

Plasma enhanced atomic layer deposition of silicon nitride using magnetized very high frequency plasma.

Ji YJ, Kim HI, Kang JE, Choi SY, Kim KH, Kim DS, Ellingboe AR, Kim HM, Yeom GY, Kim DW. Ji YJ, et al. Nanotechnology. 2024 Apr 18;35(27). doi: 10.1088/1361-6528/ad3740. Nanotechnology. 2024. PMID: 38522102

2

Plasma Enhanced Atomic Layer Deposition of Silicon Nitride for Two Different Aminosilane Precursors Using Very High Frequency (162 MHz) Plasma Source.

Ji YJ, Kim HI, Choi SY, Kang JE, Ellingboe AR, Chandra H, Lee CW, Yeom GY. Ji YJ, et al. ACS Appl Mater Interfaces. 2023 Jun 14;15(23):28763-28771. doi: 10.1021/acsami.3c02950. Epub 2023 Jun 3. ACS Appl Mater Interfaces. 2023. PMID: 37269552

3

Highly selective etching of SiN_xover SiO₂using ClF₃/Cl₂remote plasma.

Yoo SJ, Kang JE, Ji YJ, Tak HW, Cho BO, Kim YL, Lee KC, Chun JS, Kim Y, Kim DW, Yeom GY. Yoo SJ, et al. Among authors: ji yj. Nanotechnology. 2023 Aug 29;34(46). doi: 10.1088/1361-6528/acec7a. Nanotechnology. 2023. PMID: 37531942

4

Atomic layer etching of graphene through controlled ion beam for graphene-based electronics.

Kim KS, Ji YJ, Nam Y, Kim KH, Singh E, Lee JY, Yeom GY. Kim KS, et al. Among authors: ji yj. Sci Rep. 2017 May 26;7(1):2462. doi: 10.1038/s41598-017-02430-8. Sci Rep. 2017. PMID: 28550291 Free PMC article.

5

Silicon Nitride Deposition for Flexible Organic Electronic Devices by VHF (162 MHz)-PECVD Using a Multi-Tile Push-Pull Plasma Source.

Kim KS, Kim KH, Ji YJ, Park JW, Shin JH, Ellingboe AR, Yeom GY. Kim KS, et al. Among authors: ji yj. Sci Rep. 2017 Oct 19;7(1):13585. doi: 10.1038/s41598-017-14122-4. Sci Rep. 2017. PMID: 29051604 Free PMC article.

6

Deposition of Very-Low-Hydrogen-Containing Silicon at a Low Temperature Using Very-High-Frequency (162 MHz) SiH₄ Plasma.

Kim KS, Ji YJ, Kim KH, Kang JE, Ellingboe AR, Yeom GY. Kim KS, et al. Among authors: ji yj. Micromachines (Basel). 2022 Jan 24;13(2):173. doi: 10.3390/mi13020173. Micromachines (Basel). 2022. PMID: 35208298 Free PMC article.

7

Selective etching of silicon nitride over silicon oxide using ClF₃/H₂ remote plasma.

Lee WO, Kim KH, Kim DS, Ji YJ, Kang JE, Tak HW, Park JW, Song HD, Kim KS, Cho BO, Kim YL, Yeom GY. Lee WO, et al. Among authors: ji yj. Sci Rep. 2022 Apr 5;12(1):5703. doi: 10.1038/s41598-022-09252-3. Sci Rep. 2022. PMID: 35383214 Free PMC article.

8

High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process.

Kim H, Liu Y, Lu K, Chang CS, Sung D, Akl M, Qiao K, Kim KS, Park BI, Zhu M, Suh JM, Kim J, Jeong J, Baek Y, Ji YJ, Kang S, Lee S, Han NM, Kim C, Choi C, Zhang X, Choi HK, Zhang Y, Wang H, Kong L, Afeefah NN, Ansari MNM, Park J, Lee K, Yeom GY, Kim S, Hwang J, Kong J, Bae SH, Shi Y, Hong S, Kong W, Kim J. Kim H, et al. Among authors: ji yj. Nat Nanotechnol. 2023 May;18(5):464-470. doi: 10.1038/s41565-023-01340-3. Epub 2023 Mar 20. Nat Nanotechnol. 2023. PMID: 36941360

9

Ultrasensitive MoS₂ photodetector by serial nano-bridge multi-heterojunction.

Kim KS, Ji YJ, Kim KH, Choi S, Kang DH, Heo K, Cho S, Yim S, Lee S, Park JH, Jung YS, Yeom GY. Kim KS, et al. Among authors: ji yj. Nat Commun. 2019 Oct 16;10(1):4701. doi: 10.1038/s41467-019-12592-w. Nat Commun. 2019. PMID: 31619671 Free PMC article.

10

Impact of 2D-3D Heterointerface on Remote Epitaxial Interaction through Graphene.

Kim H, Lu K, Liu Y, Kum HS, Kim KS, Qiao K, Bae SH, Lee S, Ji YJ, Kim KH, Paik H, Xie S, Shin H, Choi C, Lee JH, Dong C, Robinson JA, Lee JH, Ahn JH, Yeom GY, Schlom DG, Kim J. Kim H, et al. Among authors: ji yj. ACS Nano. 2021 Jun 22;15(6):10587-10596. doi: 10.1021/acsnano.1c03296. Epub 2021 Jun 3. ACS Nano. 2021. PMID: 34081854

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