Advancing High-Performance Memristors Enabled by Position-Controlled Grain Boundaries in Controllably Grown Star-Shaped MoS2.
Lan S, Zheng F, Ding C, Hong Y, Wang B, Li C, Li S, Yang H, Hu Z, Pan B, Chai J, Wang Y, Huang G, Yue M, Wang S, Li LJ, Zhang L, Wang P.
Lan S, et al. Among authors: li lj.
Nano Lett. 2024 Dec 4;24(48):15388-15395. doi: 10.1021/acs.nanolett.4c04642. Epub 2024 Nov 22.
Nano Lett. 2024.
PMID: 39575932