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Nonhalogen Dry Etching of Metal Carbide TiAlC by Low-Pressure N2/H2 Plasma at Room Temperature.
ACS Appl Mater Interfaces. 2024 Oct 2;16(39):53195-53206. doi: 10.1021/acsami.4c11025. Epub 2024 Sep 22.
ACS Appl Mater Interfaces. 2024.
PMID: 39306766
Free PMC article.
In Situ Monitoring of Etching Characteristic and Surface Reactions in Atomic Layer Etching of SiN Using Cyclic CF4/H2 and H2 Plasmas.
Hsiao SN, Sekine M, Hori M.
Hsiao SN, et al.
ACS Appl Mater Interfaces. 2023 Jul 26;15(29):35622-35630. doi: 10.1021/acsami.3c04705. Epub 2023 Jul 13.
ACS Appl Mater Interfaces. 2023.
PMID: 37439557
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Pseudo-Wet Plasma Mechanism Enabling High-Throughput Dry Etching of SiO2 by Cryogenic-Assisted Surface Reactions.
Hsiao SN, Sekine M, Britun N, Mo MKT, Imai Y, Tsutsumi T, Ishikawa K, Iijima Y, Suda R, Yokoi M, Kihara Y, Hori M.
Hsiao SN, et al.
Small Methods. 2024 Dec;8(12):e2400090. doi: 10.1002/smtd.202400090. Epub 2024 Jun 2.
Small Methods. 2024.
PMID: 38824668
Free PMC article.
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Direct plasma treatment of caryopses after flowering in brewer's rice cultivar Yamadanishiki enhanced those grain qualities through "Smart Agriculture System".
Hashizume H, Kitano H, Mizuno H, Abe A, Hsiao SN, Yuasa G, Tohno S, Tanaka H, Matsumoto S, Sakakibara H, Kita E, Hirosue Y, Maeshima M, Mizuno M, Hori M.
Hashizume H, et al. Among authors: hsiao sn.
Sci Rep. 2024 Nov 27;14(1):29454. doi: 10.1038/s41598-024-78620-y.
Sci Rep. 2024.
PMID: 39604442
Free PMC article.
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