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Mode-locked VECSEL emitting 5 ps pulses at 675 nm.
Ranta S, Härkönen A, Leinonen T, Orsila L, Lyytikäinen J, Steinmeyer G, Guina M. Ranta S, et al. Opt Lett. 2013 Jul 1;38(13):2289-91. doi: 10.1364/OL.38.002289. Opt Lett. 2013. PMID: 23811905
GaAs surface passivation for InAs/GaAs quantum dot based nanophotonic devices.
Chellu A, Koivusalo E, Raappana M, Ranta S, Polojärvi V, Tukiainen A, Lahtonen K, Saari J, Valden M, Seppänen H, Lipsanen H, Guina M, Hakkarainen T. Chellu A, et al. Among authors: ranta s. Nanotechnology. 2021 Mar 26;32(13):130001. doi: 10.1088/1361-6528/abd0b4. Nanotechnology. 2021. PMID: 33276349
InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm.
Moriya PH, Casula R, Chappell GA, Parrotta DC, Ranta S, Kahle H, Guina M, Hastie JE. Moriya PH, et al. Among authors: ranta s. Opt Express. 2021 Feb 1;29(3):3258-3268. doi: 10.1364/OE.416210. Opt Express. 2021. PMID: 33770928 Free article.
High-efficiency 20 W yellow VECSEL.
Kantola E, Leinonen T, Ranta S, Tavast M, Guina M. Kantola E, et al. Among authors: ranta s. Opt Express. 2014 Mar 24;22(6):6372-80. doi: 10.1364/OE.22.006372. Opt Express. 2014. PMID: 24663985 Free article.
141 results