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Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence.
Nanotechnology. 2024 Oct 7;35(50). doi: 10.1088/1361-6528/ad7f5f.
Nanotechnology. 2024.
PMID: 39321819
Ge Epitaxy at Ultralow Growth Temperatures Enabled by a Pristine Growth Environment.
Wilflingseder C, Aberl J, Prado Navarrete E, Hesser G, Groiss H, Liedke MO, Butterling M, Wagner A, Hirschmann E, Corley-Wiciak C, Zoellner MH, Capellini G, Fromherz T, Brehm M.
Wilflingseder C, et al. Among authors: prado navarrete e.
ACS Appl Electron Mater. 2024 Dec 11;6(12):9029-9039. doi: 10.1021/acsaelm.4c01678. eCollection 2024 Dec 24.
ACS Appl Electron Mater. 2024.
PMID: 39735569
Free PMC article.
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