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Page 1
Fluid Imprint and Inertial Switching in Ferroelectric La:HfO2 Capacitors.
Buragohain P, Erickson A, Kariuki P, Mittmann T, Richter C, Lomenzo PD, Lu H, Schenk T, Mikolajick T, Schroeder U, Gruverman A. Buragohain P, et al. Among authors: schenk t. ACS Appl Mater Interfaces. 2019 Sep 25;11(38):35115-35121. doi: 10.1021/acsami.9b11146. Epub 2019 Sep 10. ACS Appl Mater Interfaces. 2019. PMID: 31460741
Electric field cycling behavior of ferroelectric hafnium oxide.
Schenk T, Schroeder U, Pešić M, Popovici M, Pershin YV, Mikolajick T. Schenk T, et al. ACS Appl Mater Interfaces. 2014 Nov 26;6(22):19744-51. doi: 10.1021/am504837r. Epub 2014 Nov 14. ACS Appl Mater Interfaces. 2014. PMID: 25365475
Complex Internal Bias Fields in Ferroelectric Hafnium Oxide.
Schenk T, Hoffmann M, Ocker J, Pešić M, Mikolajick T, Schroeder U. Schenk T, et al. ACS Appl Mater Interfaces. 2015 Sep 16;7(36):20224-33. doi: 10.1021/acsami.5b05773. Epub 2015 Sep 1. ACS Appl Mater Interfaces. 2015. PMID: 26308500
Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material.
Schroeder U, Richter C, Park MH, Schenk T, Pešić M, Hoffmann M, Fengler FPG, Pohl D, Rellinghaus B, Zhou C, Chung CC, Jones JL, Mikolajick T. Schroeder U, et al. Among authors: schenk t. Inorg Chem. 2018 Mar 5;57(5):2752-2765. doi: 10.1021/acs.inorgchem.7b03149. Epub 2018 Feb 15. Inorg Chem. 2018. PMID: 29446630
Memory technology-a primer for material scientists.
Schenk T, Pešić M, Slesazeck S, Schroeder U, Mikolajick T. Schenk T, et al. Rep Prog Phys. 2020 Aug;83(8):086501. doi: 10.1088/1361-6633/ab8f86. Epub 2020 May 1. Rep Prog Phys. 2020. PMID: 32357345
267 results