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All-Epitaxial Self-Assembly of Silicon Color Centers Confined Within Sub-Nanometer Thin Layers Using Ultra-Low Temperature Epitaxy.
Aberl J, Navarrete EP, Karaman M, Enriquez DH, Wilflingseder C, Salomon A, Primetzhofer D, Schubert MA, Capellini G, Fromherz T, Deák P, Udvarhelyi P, Li S, Gali Á, Brehm M. Aberl J, et al. Among authors: wilflingseder c. Adv Mater. 2024 Nov;36(48):e2408424. doi: 10.1002/adma.202408424. Epub 2024 Oct 12. Adv Mater. 2024. PMID: 39394979 Free PMC article.
Ge Epitaxy at Ultralow Growth Temperatures Enabled by a Pristine Growth Environment.
Wilflingseder C, Aberl J, Prado Navarrete E, Hesser G, Groiss H, Liedke MO, Butterling M, Wagner A, Hirschmann E, Corley-Wiciak C, Zoellner MH, Capellini G, Fromherz T, Brehm M. Wilflingseder C, et al. ACS Appl Electron Mater. 2024 Dec 11;6(12):9029-9039. doi: 10.1021/acsaelm.4c01678. eCollection 2024 Dec 24. ACS Appl Electron Mater. 2024. PMID: 39735569 Free PMC article.