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BEOL-Compatible 4F2 Oscillator Using Vertical InGaAs Biristor for Highly Scalable Monolithic 3D Ising Solver.
Small. 2024 Oct 21:e2406822. doi: 10.1002/smll.202406822. Online ahead of print.
Small. 2024.
PMID: 39434466
Dielectric-Engineered High-Speed, Low-Power, Highly Reliable Charge Trap Flash-Based Synaptic Device for Neuromorphic Computing beyond Inference.
Kim JP, Kim SK, Park S, Kuk SH, Kim T, Kim BH, Ahn SH, Cho YH, Jeong Y, Choi SY, Kim S.
Kim JP, et al. Among authors: kuk sh.
Nano Lett. 2023 Jan 25;23(2):451-461. doi: 10.1021/acs.nanolett.2c03453. Epub 2023 Jan 13.
Nano Lett. 2023.
PMID: 36637103
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Oxygen scavenging of HfZrO2-based capacitors for improving ferroelectric properties.
Kim BH, Kuk SH, Kim SK, Kim JP, Geum DM, Baek SH, Kim SH.
Kim BH, et al. Among authors: kuk sh.
Nanoscale Adv. 2022 Aug 16;4(19):4114-4121. doi: 10.1039/d2na00533f. eCollection 2022 Sep 27.
Nanoscale Adv. 2022.
PMID: 36285215
Free PMC article.
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Size-dependent optoelectronic characteristics of InGaN/GaN red micro-LEDs on 4-inch Si substrates: high pixel density arrays demonstration.
Park J, Youn EJ, Baek WJ, Chu EK, Kim HS, Geum DM, Kim JP, Kim BH, Kuk SH, Park HH, Kim SH.
Park J, et al. Among authors: kuk sh.
Opt Express. 2024 Jul 1;32(14):24242-24250. doi: 10.1364/OE.525680.
Opt Express. 2024.
PMID: 39538869
Free article.
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