Wang W - Search Results

1

Wafer-Scale Vertical 1D GaN Nanorods/2D MoS₂/PEDOT:PSS for Piezophototronic Effect-Enhanced Self-Powered Flexible Photodetectors.

Tang X, Jiang H, Lin Z, Wang X, Wang W, Li G. Tang X, et al. Among authors: wang x, wang w. Nanomicro Lett. 2024 Nov 5;17(1):56. doi: 10.1007/s40820-024-01553-8. Nanomicro Lett. 2024. PMID: 39497008 Free PMC article.

2

Highly-efficient GaN-based light-emitting diode wafers on La 0.3 Sr 1.7 AlTaO6 substrates.

Wang W, Yang W, Gao F, Lin Y, Li G. Wang W, et al. Sci Rep. 2015 Mar 23;5:9315. doi: 10.1038/srep09315. Sci Rep. 2015. PMID: 25799042 Free PMC article.

3

Interfacial reaction control and its mechanism of AlN epitaxial films grown on Si(111) substrates by pulsed laser deposition.

Wang W, Yang W, Liu Z, Wang H, Wen L, Li G. Wang W, et al. Among authors: wang h. Sci Rep. 2015 Jun 19;5:11480. doi: 10.1038/srep11480. Sci Rep. 2015. PMID: 26089026 Free PMC article.

4

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures.

Wang W, Yang W, Lin Y, Zhou S, Li G. Wang W, et al. Sci Rep. 2015 Nov 13;5:16453. doi: 10.1038/srep16453. Sci Rep. 2015. PMID: 26563573 Free PMC article.

5

GaN-based light-emitting diodes on various substrates: a critical review.

Li G, Wang W, Yang W, Lin Y, Wang H, Lin Z, Zhou S. Li G, et al. Among authors: wang h, wang w. Rep Prog Phys. 2016 May;79(5):056501. doi: 10.1088/0034-4885/79/5/056501. Epub 2016 Apr 8. Rep Prog Phys. 2016. PMID: 27058685

6

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD.

Wang W, Wang H, Yang W, Zhu Y, Li G. Wang W, et al. Among authors: wang h. Sci Rep. 2016 Apr 22;6:24448. doi: 10.1038/srep24448. Sci Rep. 2016. PMID: 27101930 Free PMC article.

7

Employing low-temperature barriers to achieve strain-relaxed and high-performance GaN-based LEDs.

Lin Z, Wang H, Wang W, Lin Y, Yang M, Chen S, Li G. Lin Z, et al. Among authors: wang h, wang w. Opt Express. 2016 May 30;24(11):11885-96. doi: 10.1364/OE.24.011885. Opt Express. 2016. PMID: 27410111 Free article.

8

Polarity control of GaN epitaxial films grown on LiGaO₂(001) substrates and its mechanism.

Zheng Y, Wang W, Li X, Li Y, Huang L, Li G. Zheng Y, et al. Among authors: wang w. Phys Chem Chem Phys. 2017 Aug 16;19(32):21467-21473. doi: 10.1039/c7cp03812g. Phys Chem Chem Phys. 2017. PMID: 28759081

9

2D AlN Layers Sandwiched Between Graphene and Si Substrates.

Wang W, Zheng Y, Li X, Li Y, Zhao H, Huang L, Yang Z, Zhang X, Li G. Wang W, et al. Adv Mater. 2019 Jan;31(2):e1803448. doi: 10.1002/adma.201803448. Epub 2018 Nov 4. Adv Mater. 2019. PMID: 30393921

10

Lattice Structure and Bandgap Control of 2D GaN Grown on Graphene/Si Heterostructures.

Wang W, Li Y, Zheng Y, Li X, Huang L, Li G. Wang W, et al. Small. 2019 Apr;15(14):e1802995. doi: 10.1002/smll.201802995. Epub 2019 Feb 28. Small. 2019. PMID: 30821114

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