Jeong JK - Search Results

1

Layer-by-Layer Growth of Two-Dimensional Tellurium Thin Films via Ultrahigh-Pressure Atomic Layer Deposition for p-Type Semiconductors.

Tran DC, Pham GH, Huong Chu TT, Kim J, Jeong JK, Im S, Lee BH, Sung MM. Tran DC, et al. Among authors: jeong jk. Nano Lett. 2024 Dec 25;24(51):16276-16282. doi: 10.1021/acs.nanolett.4c04363. Epub 2024 Dec 11. Nano Lett. 2024. PMID: 39663820

2

Complementary Hybrid Semiconducting Superlattices with Multiple Channels and Mutual Stabilization.

Kim J, Huong CTT, Long NV, Yoon M, Kim MJ, Jeong JK, Choi S, Kim DH, Lee CH, Lee SU, Sung MM. Kim J, et al. Among authors: jeong jk. Nano Lett. 2020 Jul 8;20(7):4864-4871. doi: 10.1021/acs.nanolett.0c00859. Epub 2020 Jun 18. Nano Lett. 2020. PMID: 32551703

3

Tailoring Subthreshold Swing in A-IGZO Thin-Film Transistors for Amoled Displays: Impact of Conversion Mechanism on Peald Deposition Sequences.

Yoon SH, Cho JH, Cho I, Kim MJ, Hur JS, Bang SW, Lee HJ, Bae JU, Kim J, Shong B, Jeong JK. Yoon SH, et al. Among authors: jeong jk. Small Methods. 2024 Aug;8(8):e2301185. doi: 10.1002/smtd.202301185. Epub 2024 Jan 8. Small Methods. 2024. PMID: 38189565

4

Atomic Layer Deposition Process-Enabled Carrier Mobility Boosting in Field-Effect Transistors through a Nanoscale ZnO/IGO Heterojunction.

Seul HJ, Kim MJ, Yang HJ, Cho MH, Cho MH, Song WB, Jeong JK. Seul HJ, et al. Among authors: jeong jk. ACS Appl Mater Interfaces. 2020 Jul 29;12(30):33887-33898. doi: 10.1021/acsami.0c06382. Epub 2020 Jul 7. ACS Appl Mater Interfaces. 2020. PMID: 32571011

5

High-Performance Thin-Film Transistors with an Atomic-Layer-Deposited Indium Gallium Oxide Channel: A Cation Combinatorial Approach.

Yang HJ, Seul HJ, Kim MJ, Kim Y, Cho HC, Cho MH, Song YH, Yang H, Jeong JK. Yang HJ, et al. Among authors: jeong jk. ACS Appl Mater Interfaces. 2020 Nov 25;12(47):52937-52951. doi: 10.1021/acsami.0c16325. Epub 2020 Nov 10. ACS Appl Mater Interfaces. 2020. PMID: 33172258

6

High-Performance Indium Gallium Tin Oxide Transistors with an Al₂O₃ Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and Excess Oxygen in the Al₂O₃ Dielectric Film.

Choi CH, Kim T, Ueda S, Shiah YS, Hosono H, Kim J, Jeong JK. Choi CH, et al. Among authors: jeong jk. ACS Appl Mater Interfaces. 2021 Jun 23;13(24):28451-28461. doi: 10.1021/acsami.1c04210. Epub 2021 Jun 11. ACS Appl Mater Interfaces. 2021. PMID: 34111928

7

High-Performance Indium-Based Oxide Transistors with Multiple Channels Through Nanolaminate Structure Fabricated by Plasma-Enhanced Atomic Layer Deposition.

Cho MH, Choi CH, Kim MJ, Hur JS, Kim T, Jeong JK. Cho MH, et al. Among authors: jeong jk. ACS Appl Mater Interfaces. 2023 Apr 19;15(15):19137-19151. doi: 10.1021/acsami.3c00038. Epub 2023 Apr 6. ACS Appl Mater Interfaces. 2023. PMID: 37023364

8

Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of In₂O₃ and Application to High-Performance Field-Effect Transistors.

Lee HY, Hur JS, Cho I, Choi CH, Yoon SH, Kwon Y, Shong B, Jeong JK. Lee HY, et al. Among authors: jeong jk. ACS Appl Mater Interfaces. 2023 Oct 25. doi: 10.1021/acsami.3c11796. Online ahead of print. ACS Appl Mater Interfaces. 2023. PMID: 37877895

9

Double-gate structure enabling remote Coulomb scattering-free transport in atomic-layer-deposited IGO thin-film transistors with HfO₂ gate dielectric through insertion of SiO₂ interlayer.

Choi CH, Kim T, Kim MJ, Kim GB, Oh JE, Jeong JK. Choi CH, et al. Among authors: jeong jk. Sci Rep. 2024 Apr 1;14(1):7623. doi: 10.1038/s41598-024-58330-1. Sci Rep. 2024. PMID: 38561385 Free PMC article.

10

Mobility and current boosting of In-Ga-Zn-O thin-film transistors with metal capping layer oxidation.

Sun H, Bang J, Ju H, Choi S, Lee Y, Kim S, Noh Y, Choi E, Jeong JK, Lee SB. Sun H, et al. Among authors: jeong jk. Nanotechnology. 2024 Jun 14;35(35). doi: 10.1088/1361-6528/ad544b. Nanotechnology. 2024. PMID: 38838661

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