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Depletion Mode MOSFET Using La-Doped BaSnO3 as a Channel Material.
Yue J, Prakash A, Robbins MC, Koester SJ, Jalan B. Yue J, et al. Among authors: jalan b. ACS Appl Mater Interfaces. 2018 Jun 27;10(25):21061-21065. doi: 10.1021/acsami.8b05229. Epub 2018 Jun 18. ACS Appl Mater Interfaces. 2018. PMID: 29897732
Epitaxial SrTiO3 films with dielectric constants exceeding 25,000.
Yang Z, Lee D, Yue J, Gabel J, Lee TL, James RD, Chambers SA, Jalan B. Yang Z, et al. Among authors: jalan b. Proc Natl Acad Sci U S A. 2022 Jun 7;119(23):e2202189119. doi: 10.1073/pnas.2202189119. Epub 2022 Jun 2. Proc Natl Acad Sci U S A. 2022. PMID: 35653574 Free PMC article.
Engineering metal oxidation using epitaxial strain.
Nair S, Yang Z, Lee D, Guo S, Sadowski JT, Johnson S, Saboor A, Li Y, Zhou H, Comes RB, Jin W, Mkhoyan KA, Janotti A, Jalan B. Nair S, et al. Among authors: jalan b. Nat Nanotechnol. 2023 Sep;18(9):1005-1011. doi: 10.1038/s41565-023-01397-0. Epub 2023 May 22. Nat Nanotechnol. 2023. PMID: 37217765
42 results