Tang B - Search Results

1

Design of high-voltage deep ultraviolet LED sub-mesas toward improved optoelectronic performance.

Liao Z, Lv Z, Tang B, Jiang J, Liu S, Zhou S. Liao Z, et al. Among authors: tang b. Opt Lett. 2025 Jan 1;50(1):173-176. doi: 10.1364/OL.546736. Opt Lett. 2025. PMID: 39718881

2

Strategically constructed AlGaN doping barriers for efficient deep ultraviolet light-emitting diodes.

Zhang Z, Zhou Q, Liu X, Lv Z, Tang B, Geng H, Qi S, Zhou S. Zhang Z, et al. Among authors: tang b. Opt Lett. 2024 Apr 15;49(8):2049-2052. doi: 10.1364/OL.522212. Opt Lett. 2024. PMID: 38621073

3

Strategically constructed AlGaN doping barriers for efficient deep ultraviolet light-emitting diodes: erratum.

Zhang Z, Zhou Q, Liu X, Lv Z, Tang B, Geng H, Qi S, Zhou S. Zhang Z, et al. Among authors: tang b. Opt Lett. 2024 Jun 1;49(11):2877. doi: 10.1364/OL.527201. Opt Lett. 2024. PMID: 38824281

4

InGaN quantum well with gradually varying indium content for high-efficiency GaN-based green light-emitting diodes.

Zhou S, Wan Z, Lei Y, Tang B, Tao G, Du P, Zhao X. Zhou S, et al. Among authors: tang b. Opt Lett. 2022 Mar 1;47(5):1291-1294. doi: 10.1364/OL.452477. Opt Lett. 2022. PMID: 35230348

5

Highly efficient AlGaN-based deep-ultraviolet light-emitting diodes: from bandgap engineering to device craft.

Liu X, Lv Z, Liao Z, Sun Y, Zhang Z, Sun K, Zhou Q, Tang B, Geng H, Qi S, Zhou S. Liu X, et al. Among authors: tang b. Microsyst Nanoeng. 2024 Aug 13;10:110. doi: 10.1038/s41378-024-00737-x. eCollection 2024. Microsyst Nanoeng. 2024. PMID: 39145147 Free PMC article.

6

Strategically constructed patterned sapphire with silica array to boost substrate performance in GaN-based flip-chip visible light-emitting diodes.

Lan S, Tang B, Hu H, Zhou S. Lan S, et al. Among authors: tang b. Opt Express. 2020 Dec 7;28(25):38444-38455. doi: 10.1364/OE.413088. Opt Express. 2020. PMID: 33379655 Free article.

7

Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes.

Wan H, Tang B, Li N, Zhou S, Gui C, Liu S. Wan H, et al. Among authors: tang b. Nanomaterials (Basel). 2019 Mar 5;9(3):365. doi: 10.3390/nano9030365. Nanomaterials (Basel). 2019. PMID: 30841511 Free PMC article.

8

Toward efficient long-wavelength III-nitride emitters using a hybrid nucleation layer.

Tang B, Gong L, Hu H, Sun H, Zhou S. Tang B, et al. Opt Express. 2021 Aug 16;29(17):27404-27415. doi: 10.1364/OE.430721. Opt Express. 2021. PMID: 34615157 Free article.

9

High-power and reliable GaN-based vertical light-emitting diodes on 4-inch silicon substrate.

Zhou S, Xu H, Tang B, Liu Y, Wan H, Miao J. Zhou S, et al. Among authors: tang b. Opt Express. 2019 Sep 30;27(20):A1506-A1516. doi: 10.1364/OE.27.0A1506. Opt Express. 2019. PMID: 31684502 Free article.

10

High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate.

Zhao Q, Miao J, Zhou S, Gui C, Tang B, Liu M, Wan H, Hu J. Zhao Q, et al. Among authors: tang b. Nanomaterials (Basel). 2019 Aug 17;9(8):1178. doi: 10.3390/nano9081178. Nanomaterials (Basel). 2019. PMID: 31426467 Free PMC article.

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