Lee S - Search Results

1

Reconfigurable Sequential-Logic-in-Memory Implementation Utilizing Ferroelectric Field-Effect Transistors.

Niu J, Kim D, Li J, Lyu J, Lee Y, Lee S. Niu J, et al. Among authors: lee y, lee s. ACS Nano. 2025 Jan 2. doi: 10.1021/acsnano.4c14062. Online ahead of print. ACS Nano. 2025. PMID: 39746872

2

Two-Dimensional CIPS-InSe van der Waal Heterostructure Ferroelectric Field Effect Transistor for Nonvolatile Memory Applications.

Singh P, Baek S, Yoo HH, Niu J, Park JH, Lee S. Singh P, et al. Among authors: lee s. ACS Nano. 2022 Apr 26;16(4):5418-5426. doi: 10.1021/acsnano.1c09136. Epub 2022 Mar 2. ACS Nano. 2022. PMID: 35234041

3

Artificial Visual Systems Fabricated with Ferroelectric van der Waals Heterostructure for In-Memory Computing Applications.

Das B, Baek S, Niu J, Jang C, Lee Y, Lee S. Das B, et al. Among authors: lee y, lee s. ACS Nano. 2023 Nov 14;17(21):21297-21306. doi: 10.1021/acsnano.3c05771. Epub 2023 Oct 26. ACS Nano. 2023. PMID: 37882177

4

Single-Crystalline Pyramidal TiC_x Particles Grown by Biphase Diffusion Synthesis.

Yang Q, Yang Y, Gong Q, Li J, Woo HJ, Niu J, Kim M, Lee S, Song YJ. Yang Q, et al. Among authors: lee s. ACS Nano. 2022 May 24;16(5):7713-7720. doi: 10.1021/acsnano.1c11524. Epub 2022 May 2. ACS Nano. 2022. PMID: 35499240

5

Ferroelectric Field-Effect-Transistor Integrated with Ferroelectrics Heterostructure.

Baek S, Yoo HH, Ju JH, Sriboriboon P, Singh P, Niu J, Park JH, Shin C, Kim Y, Lee S. Baek S, et al. Among authors: lee s. Adv Sci (Weinh). 2022 Jul;9(21):e2200566. doi: 10.1002/advs.202200566. Epub 2022 May 15. Adv Sci (Weinh). 2022. PMID: 35570404 Free PMC article.

6

Functionalized Organic Material Platform for Realization of Ternary Logic Circuit.

Jeon J, Kim MJ, Shin G, Lee M, Kim YJ, Kim B, Lee Y, Cho JH, Lee S. Jeon J, et al. Among authors: lee y, lee m, lee s. ACS Appl Mater Interfaces. 2020 Feb 5;12(5):6119-6126. doi: 10.1021/acsami.9b18772. Epub 2020 Jan 21. ACS Appl Mater Interfaces. 2020. PMID: 31913001

7

Ferroelectric Stochasticity in 2D CuInP₂S₆ and Its Application for True Random Number Generator.

Kang S, Hong D, Das B, Lee SM, Park JS, Lee Y, Lee S. Kang S, et al. Among authors: lee y, lee sm, lee s. Adv Mater. 2024 Jul 16:e2406850. doi: 10.1002/adma.202406850. Online ahead of print. Adv Mater. 2024. PMID: 39011946

8

A multiple negative differential resistance heterojunction device and its circuit application to ternary static random access memory.

Kim KH, Park HY, Shim J, Shin G, Andreev M, Koo J, Yoo G, Jung K, Heo K, Lee Y, Yu HY, Kim KR, Cho JH, Lee S, Park JH. Kim KH, et al. Among authors: lee y, lee s. Nanoscale Horiz. 2020 Mar 30;5(4):654-662. doi: 10.1039/c9nh00631a. Nanoscale Horiz. 2020. PMID: 32226980

9

Anisotropy of impact ionization in WSe₂ field effect transistors.

Kang T, Choi H, Li J, Kang C, Hwang E, Lee S. Kang T, et al. Among authors: lee s. Nano Converg. 2023 Mar 17;10(1):13. doi: 10.1186/s40580-023-00361-x. Nano Converg. 2023. PMID: 36932269 Free PMC article.

10

Plasma-Treated Thickness-Controlled Two-Dimensional Black Phosphorus and Its Electronic Transport Properties.

Jia J, Jang SK, Lai S, Xu J, Choi YJ, Park JH, Lee S. Jia J, et al. Among authors: lee s. ACS Nano. 2015 Sep 22;9(9):8729-36. doi: 10.1021/acsnano.5b04265. Epub 2015 Aug 31. ACS Nano. 2015. PMID: 26301840

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