4202078/Beijing Municipal Natural Science Foundation[Grants and Funding] - Search Results

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Year	Number of Results
2021	2
2022	1
2025	0

Page 1

4-Levels Vertically Stacked SiGe Channel Nanowires Gate-All-Around Transistor with Novel Channel Releasing and Source and Drain Silicide Process.

Cheng X, Li Y, Zhao F, Chen A, Liu H, Li C, Zhang Q, Yin H, Luo J, Wang W. Cheng X, et al. Nanomaterials (Basel). 2022 Mar 7;12(5):889. doi: 10.3390/nano12050889. Nanomaterials (Basel). 2022. PMID: 35269377 Free PMC article.

Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics.

Li Y, Zhao F, Cheng X, Liu H, Zan Y, Li J, Zhang Q, Wu Z, Luo J, Wang W. Li Y, et al. Nanomaterials (Basel). 2021 Jun 28;11(7):1689. doi: 10.3390/nano11071689. Nanomaterials (Basel). 2021. PMID: 34203194 Free PMC article.

Investigate on the Mechanism of HfO₂/Si_0.7Ge_0.3 Interface Passivation Based on Low-Temperature Ozone Oxidation and Si-Cap Methods.

Yao Q, Ma X, Wang H, Wang Y, Wang G, Zhang J, Liu W, Wang X, Yan J, Li Y, Wang W. Yao Q, et al. Nanomaterials (Basel). 2021 Apr 9;11(4):955. doi: 10.3390/nano11040955. Nanomaterials (Basel). 2021. PMID: 33918553 Free PMC article.

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