ACCEPTED MANUSCRIPTThe following article is Open access

Perspective on the spin field-effect transistor

Accepted Manuscript online 26 September 2024 © 2024 The Author(s). Published by IOP Publishing Ltd

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DOI 10.1088/1361-6463/ad8003

10.1088/1361-6463/ad8003

Abstract

The spin field effect transistor (sFET), proposed by Datta and Das in 1990, has long been regarded as a model semiconductor spintronic device, offering potential for new, more energy-efficient functionalities in electronic devices. Here, the overview is given how the pursuit of meeting the requirements for implementing the sFET concept has influenced spintronic research, leading to a greater understanding of spin phenomena in solids and resulting in numerous exciting effects. After looking back, based on the recent developments, the possible future directions of the sFET-related research is described.

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