Interplay of self-doping and disorder in epitaxial Bi2Sr2Ca(n-1)Cu(n)O(2n+4+x) (n = 1,2) thin films under heavy-Ion irradiation

A Pomar; Z Konstantinovic; L Martel; ZZ Li; H Raffy

doi:10.1103/PhysRevLett.85.2809

Interplay of self-doping and disorder in epitaxial Bi2Sr2Ca(n-1)Cu(n)O(2n+4+x) (n = 1,2) thin films under heavy-Ion irradiation

Phys Rev Lett. 2000 Sep 25;85(13):2809-12. doi: 10.1103/PhysRevLett.85.2809.

Authors

A Pomar¹, Z Konstantinovic, L Martel, ZZ Li, H Raffy

Affiliation

¹ Laboratoire de Physique des Solides, Batiment 510, Universite Paris-Sud, 91405 Orsay Cedex, France.

PMID: 10991239
DOI: 10.1103/PhysRevLett.85.2809

Abstract

We propose a novel mechanism for the modification of T(c) in Bi(2)Sr(2)Ca(n-1)Cu(n)O(2n+4+x) epitaxial thin films (2212 and 2201) under energetic heavy-ion irradiation. By irradiating films with various oxygen content, we show from the temperature dependence of the resistance that irradiation always produces a doping effect superimposed on the damage caused to the sample. The effect is larger in 2201 than in 2212 thin films. The T(c) decrease observed by irradiating optimally doped films is partially due to this doping effect. Irradiation of semiconducting samples restores metallic superconducting behavior.