The lowest limit for detection (LLD) of the impurity concentration doped in semiconductors in the case of fluorescence XAFS measurements has been investigated as a function of the matrix of the impurity and the geometry of the measurement. When the impurity concentration is very low and other background noise is well suppressed, X-ray resonant Raman scattering by the constituent atoms of the matrix remains as a major background for the fluorescence-detected XAFS measurement. For example, in the fluorescence-detected XAFS measurement for Er-doped semiconductors at the Er L(III)-edge, the LLD of the Er concentration was about 5 x 10(14) to 1 x 10(15) cm(-2) for GaAs and GaP, and lower than 1 x 10(14) cm(-2) for InP. The resonant Raman scattering of Ga atoms in the host semiconductor determines the LLD.