In situ negative patterning of p-silicon via scanning probe lithography in HF/EtOH liquid bridges

Younghun Kim; Sung Koo Kang; Inhee Choi; Jeongjin Lee; Jongheop Yi

doi:10.1021/ja052319v

In situ negative patterning of p-silicon via scanning probe lithography in HF/EtOH liquid bridges

J Am Chem Soc. 2005 Jul 6;127(26):9380-1. doi: 10.1021/ja052319v.

Authors

Younghun Kim¹, Sung Koo Kang, Inhee Choi, Jeongjin Lee, Jongheop Yi

Affiliation

¹ School of Chemical and Biological Engineering, Seoul National University, Seoul 151-742, Korea.

PMID: 15984860
DOI: 10.1021/ja052319v

Abstract

We succeeded in extending local oxidation to in situ negative patterning. HF/EtOH was used as both gap-bridging electrolyte and oxyanion source. EtOH and HF were found to be able to accelerate the growth of silicon oxide and simultaneously etch grown oxide, respectively. These findings are expected to open new possibilities in utilizing local oxidation nanolithography in order to directly fabricate deeper well structures while at the same time maintaining lateral sizes within the nanometer range.