Abstract
We report on low-temperature transport measurements on single and double quantum dots defined using local gates to electrostatically deplete InAs nanowires grown by chemical beam epitaxy. This technique allows us to define multiple quantum dots along a semiconducting nanowire and tune the coupling between them.
Publication types
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Evaluation Study
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Research Support, Non-U.S. Gov't
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Research Support, U.S. Gov't, Non-P.H.S.
MeSH terms
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Arsenicals / analysis
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Arsenicals / chemistry*
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Electric Conductivity
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Equipment Design
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Equipment Failure Analysis
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Indium / analysis
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Indium / chemistry*
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Microelectrodes*
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Nanotechnology / instrumentation*
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Nanotechnology / methods
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Nanotubes / analysis
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Nanotubes / chemistry*
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Nanotubes / ultrastructure*
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Particle Size
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Quantum Dots*
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Semiconductors*
Substances
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Arsenicals
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Indium
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indium arsenide