Local pressure-induced metallization of a semiconducting carbon nanotube in a crossed junction

Phys Rev Lett. 2006 Mar 3;96(8):086804. doi: 10.1103/PhysRevLett.96.086804. Epub 2006 Mar 3.

Abstract

The electronic and vibrational density of states of a semiconducting carbon nanotube in a crossed junction was investigated by elastic and inelastic scanning tunneling spectroscopy. The strong radial compression of the nanotube at the junction induces local metallization spatially confined to a few nanometers. The local electronic modifications are correlated with the observed changes in the radial breathing and G band phonon modes, which react very sensitively to local mechanical deformation. In addition, the experiments reveal the crucial contribution of the image charges to the contact potential at nanotube-metal interfaces.