1-Imino nitroxide pyrene for high performance organic field-effect transistors with low operating voltage

Ying Wang; Hongmei Wang; Yunqi Liu; Chong-An Di; Yanming Sun; Weiping Wu; Gui Yu; Deqing Zhang; Daoben Zhu

doi:10.1021/ja064580x

1-Imino nitroxide pyrene for high performance organic field-effect transistors with low operating voltage

J Am Chem Soc. 2006 Oct 11;128(40):13058-9. doi: 10.1021/ja064580x.

Authors

Ying Wang¹, Hongmei Wang, Yunqi Liu, Chong-An Di, Yanming Sun, Weiping Wu, Gui Yu, Deqing Zhang, Daoben Zhu

Affiliation

¹ Key Laboratory of Organic Solids, Center for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, China.

PMID: 17017778
DOI: 10.1021/ja064580x

Abstract

Organic field-effect transistors (OFETs) fabricated with vapor-deposited films of 1-imino nitroxide pyrene show excellent p-type FET characteristics, with mobility up to 0.1 cm2 V-1 s-1 and an on/off ratio of nearly 5 x 104. Most remarkable feature of the FETs is their low operating voltage due to the low threshold voltage (about -0.6 V) and inverse subthreshold slope (about 540 mV decade-1).