Luminescence of rare earth complex based on organic-inorganic heterostructure is reported. The structure of the device is ITO/PVK:Tb/inorganic material/Al, where inorganic material includes ZnS, ZnO or ZnSe. For this structure, the authors obtained the characteristic emission of Tb ion. A large part of driving voltage was dropped on the PVK layer because the dielectric constant of ZnS is 3 times bigger than that of PVK. The electric field strength in PVK layer was improved, so the velocity of hole in PVK was increased. The balance of injected charge was enhanced.