Diameter-dependent composition of vapor-liquid-solid grown Si(1-x)Ge(x) nanowires

Nano Lett. 2007 Oct;7(10):3241-5. doi: 10.1021/nl071132u. Epub 2007 Sep 26.

Abstract

Diameter-dependent compositions of Si(1-x)Ge(x) nanowires grown by a vapor-liquid-solid mechanism using SiH(4) and GeH(4) precursors are studied by transmission electron microscopy and X-ray energy dispersive spectroscopy. For the growth conditions studied, the Ge concentration in Si(1-x)Ge(x) nanowires shows a strong dependence on nanowire diameter, with the Ge concentration decreasing with decreasing nanowire diameter below approximately 50 nm. The size-dependent nature of Ge concentration in Si(1-x)Ge(x) NWs is strongly suggestive of Gibbs-Thomson effects and highlights another important phenomenon in nanowire growth.

Publication types

  • Research Support, Non-U.S. Gov't
  • Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

  • Computer Simulation
  • Crystallization / methods*
  • Gases / chemistry
  • Germanium / chemistry*
  • Macromolecular Substances / chemistry
  • Materials Testing
  • Models, Chemical*
  • Models, Molecular*
  • Molecular Conformation
  • Nanostructures / chemistry*
  • Nanostructures / ultrastructure*
  • Nanotechnology / methods
  • Particle Size
  • Phase Transition
  • Semiconductors
  • Silicon / chemistry*
  • Solutions
  • Surface Properties

Substances

  • Gases
  • Macromolecular Substances
  • Solutions
  • Germanium
  • Silicon