Disorder dominated microwave conductance spectra of doped silicon nanowire arrays

Clark Highstrete; Mark Lee; Aaron L Vallett; Sarah M Eichfeld; Joan M Redwing; Theresa S Mayer

doi:10.1021/nl072496p

Disorder dominated microwave conductance spectra of doped silicon nanowire arrays

Nano Lett. 2008 Jun;8(6):1557-61. doi: 10.1021/nl072496p. Epub 2008 Apr 30.

Authors

Clark Highstrete¹, Mark Lee, Aaron L Vallett, Sarah M Eichfeld, Joan M Redwing, Theresa S Mayer

Affiliation

¹ Sandia National Laboratories, Albuquerque, NM 87185, USA. [email protected]

PMID: 18444685
DOI: 10.1021/nl072496p

Abstract

Conductance spectra of doped silicon nanowire (SiNW) arrays were measured from 0.5 to 50 GHz at temperatures between 4 and 293 K. For arrays consisting of 11 to >10(4) SiNWs, the conductance was found to increase with frequency as f(s), with 0.25 < s < 0.45, consistent with behavior found universally in disordered systems. A possible cause is disorder from Si/SiO x interface states dominating the conductance due to the high surface-to-volume ratio of the nanowires.

Publication types

Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

Computer Simulation
Electric Conductivity
Materials Testing
Microwaves*
Models, Chemical*
Nanotechnology / methods*
Nanotubes / chemistry*
Particle Size
Silicon / chemistry*

Substances

Silicon