Nanoporous anodic alumina (AAO) templates are routinely created with ease on substrates, particularly Si wafers. However, the inability to stabilize Al anodization on indium tin oxide (ITO) glass is a key stumbling block that has prevented AAO-assisted deposition of nanomaterial arrays extending from ITO that are attractive for a range of opto-electronic applications (e.g., solar cells and photonic devices). We report on the processing of stable AAO templates directly on ITO substrates by utilizing an ultrathin (0.3 nm) adhesion/passivation layer of Ti between ITO and Al. Precise control of the Ti layer thickness to within the subnanometer (0.2-0.5 nm) range is essential for the anodization process for two factors: (1) to prevent the delamination of Al and destruction of ITO; and (2) to prevent the formation of thick barrier layers at the bottom of the pore channels, which prevent pore connectivity to the conductive ITO substrate. We explore the complex correlation between the electrical properties of substrates (and interlayers) and barrier layer formation and further highlight the criteria for successful barrier layer removal.