The effect of electric field on near-band-edge (NBE) photoluminescence (PL) of a sol-gel derived ZnO film has been investigated via a SiO(2)/ZnO/SiOx(x < 2) double-barrier structure on Si under different forward biases. A forward current-voltage curve is characterized by a negative-differential-resistance (NDR) region, which follows a normal region. With an increase of forward bias the NBE PL of the ZnO film is enhanced in the normal region, but it is attenuated in the NDR region. The increase of forward bias also causes the NBE PL of the ZnO film to blueshift from approximately 377.6 to approximately 374.9 nm no matter how current changes. The mechanism for the effect of bias on the intensity and position of NBE PL of the ZnO film is discussed.