Analytical theory of four-wave mixing in semiconductor amplifiers

Opt Lett. 1994 Jun 15;19(12):892-4. doi: 10.1364/ol.19.000892.

Abstract

The analytical theory of four-wave mixing in semiconductor amplifiers is developed. The theory applies to arbitrary saturation conditions. If carrier depletion and spectral hole burning are considered, the conversion efficiency is the maximum at a total input power that produces a gain compression of e(-2) (approximately -9 dB), independently of the physical parameters of the amplifier.