High-performance single nanowire tunnel diodes

Jesper Wallentin; Johan M Persson; Jakob B Wagner; Lars Samuelson; Knut Deppert; Magnus T Borgström

doi:10.1021/nl903941b

High-performance single nanowire tunnel diodes

Nano Lett. 2010 Mar 10;10(3):974-9. doi: 10.1021/nl903941b.

Authors

Jesper Wallentin¹, Johan M Persson, Jakob B Wagner, Lars Samuelson, Knut Deppert, Magnus T Borgström

Affiliation

¹ Solid State Physics, Lund University, Box 118, S-221 00, Lund, Sweden. [email protected]

PMID: 20163125
DOI: 10.1021/nl903941b

Abstract

We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 27.6 at liquid helium temperature. These sub-100-nm-diameter structures are promising components for solar cells as well as electronic applications.

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Crystallization / methods*
Equipment Design
Equipment Failure Analysis
Macromolecular Substances / chemistry
Materials Testing
Molecular Conformation
Nanostructures / chemistry*
Nanostructures / ultrastructure*
Nanotechnology / instrumentation*
Particle Size
Semiconductors*
Surface Properties

Substances

Macromolecular Substances