We present a method to study current paths through quantum cascade lasers (QCLs). The temperature dependence of the current is measured at a fixed voltage. At low temperatures we find activation energies that correspond to the energy difference between the injector ground state and the upper laser level. At higher temperatures additional paths with larger activation energies are found. Application of this method to high performance QCLs based on strained InGaAs/InAlAs quantum wells and barriers with different band-offsets allows us to identify individual parasitic current paths through the devices. The results give insight into the transport properties of quantum cascade lasers thus providing a useful tool for device optimization.