Abstract
In this paper, we reviewed the current development and patents for the application of high-brightness and high-efficiency white light-emitting diode (LED). The high-efficiency GaN nanostructures, such as disk, pyramid, and rod were grown on LiAlO(2) substrate by plasma-assisted molecular-beam epitaxy, and a model was developed to demonstrate the growth of the GaN nanostructures. Based on the results, the GaN disk p-n junction was designed for the application of high brightness and high efficiency white LED.
Publication types
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Research Support, Non-U.S. Gov't
MeSH terms
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Aluminum Compounds / chemistry*
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Conservation of Energy Resources
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Electrical Equipment and Supplies*
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Gallium / chemistry*
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Lighting / instrumentation*
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Lithium Compounds / chemistry*
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Microscopy, Electron, Scanning
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Microscopy, Electron, Transmission
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Models, Molecular
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Nanostructures / chemistry*
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Nanostructures / ultrastructure
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Nitrogen / chemistry*
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Patents as Topic
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X-Ray Diffraction
Substances
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Aluminum Compounds
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Lithium Compounds
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lithium aluminate
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Gallium
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Nitrogen