Electrically pumped wavelength-tunable ultraviolet random lasing from Mg(x)Zn(1-x)O films on Si

Ye Tian; Xiangyang Ma; Peiliang Chen; Yuanyuan Zhang; Deren Yang

doi:10.1364/OE.18.010668

Electrically pumped wavelength-tunable ultraviolet random lasing from Mg(x)Zn(1-x)O films on Si

Opt Express. 2010 May 10;18(10):10668-73. doi: 10.1364/OE.18.010668.

Authors

Ye Tian¹, Xiangyang Ma, Peiliang Chen, Yuanyuan Zhang, Deren Yang

Affiliation

¹ State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China.

PMID: 20588919
DOI: 10.1364/OE.18.010668

Abstract

We report the electrically pumped wavelength-tunable ultraviolet random lasing from Mg(x)Zn(1-x)O films with different bandgap energies, which act as the semiconductor components in metal-insulator- semiconductor (MIS) structures fabricated on Si substrates. When the metal (Au herein) gates of the MIS structures are applied with sufficiently high positive voltages, random lasing from the Mg(x)Zn(1-x)O films occurs, featuring a series of narrow spikes in the emitted spectra. Overall, the central wavelength of the random lasing spectrum is tuned from approximately 377 to 352 nm with the increase of x value in Mg(x)Zn(1-x)O from 0 to 0.35. The mechanism for the electrically pumped random lasing has been tentatively elucidated taking into account both the multiple optical scattering and the optical gain proceeding in the Mg(x)Zn(1-x)O films.

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Electronics / instrumentation*
Equipment Design
Equipment Failure Analysis
Lasers, Solid-State*
Membranes, Artificial*
Ultraviolet Rays

Substances

Membranes, Artificial