Fabrication and characterization of silicon antireflection structures for infrared rays using a femtosecond laser

Opt Lett. 2011 Apr 1;36(7):1176-8. doi: 10.1364/OL.36.001176.

Abstract

We focus on IR sensors with lower reflection for the wavelength around 10 μm, strongly awaited for detecting human bodies. A concave structure was designed as a more suitable reflection-free structure for IR light, and an optical system with a femtosecond laser was employed for verification of the effectiveness of the structure. The microstructures prepared through this process were fabricated and optically measured using SEM, FT-IR, and Raman spectroscopy. The measurement revealed that good reflection-free structures were realized for IR sensors with lower reflection for the wavelength of around 10 μm.