Threshold gain analysis in GaN-based photonic crystal surface emitting lasers

Peng-Hsiang Weng; Tzeng-Tsong Wu; Tien-Chang Lu; Shing-Chung Wang

doi:10.1364/OL.36.001908

Threshold gain analysis in GaN-based photonic crystal surface emitting lasers

Opt Lett. 2011 May 15;36(10):1908-10. doi: 10.1364/OL.36.001908.

Authors

Peng-Hsiang Weng¹, Tzeng-Tsong Wu, Tien-Chang Lu, Shing-Chung Wang

Affiliation

¹ Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30050, Taiwan.

PMID: 21593931
DOI: 10.1364/OL.36.001908

Abstract

We have analyzed threshold gains and lasing modes in GaN-based photonic crystal (PC) surface emitting lasers (PCSELs) by using the multiple scattering method (MSM) for triangular-lattice PC patterns. Moreover, GaN-based PCSELs with different boundary shapes have been fabricated and measured. The lasing mode at the Γ band edge of GaN-based PCSELs can be identified by using the angled resolved spectroscopy and matched well to the results calculated by MSM. Threshold conditions in the GaN-based PCSELs with different boundary shapes are obtained by optical pumping and agree well with simulation results.