Ultrafast room temperature NH3 sensing with positively gated reduced graphene oxide field-effect transistors

Chem Commun (Camb). 2011 Jul 21;47(27):7761-3. doi: 10.1039/c1cc12658j. Epub 2011 Jun 6.

Abstract

Reduced graphene oxide (R-GO) under a positive gate potential (n-type conductance) exhibits an instantaneous response and fast recovery for NH(3) sensing, far superior to the performance in p-mode at zero/negative gate potential. Our findings have important implications for fast, repeatable, room temperature gas detection using graphene/R-GO.