Using Si and Ge nanostructures as substrates for surface-enhanced Raman scattering based on photoinduced charge transfer mechanism

Xiaotian Wang; Wensheng Shi; Guangwei She; Lixuan Mu

doi:10.1021/ja2057874

Using Si and Ge nanostructures as substrates for surface-enhanced Raman scattering based on photoinduced charge transfer mechanism

J Am Chem Soc. 2011 Oct 19;133(41):16518-23. doi: 10.1021/ja2057874. Epub 2011 Sep 22.

Authors

Xiaotian Wang¹, Wensheng Shi, Guangwei She, Lixuan Mu

Affiliation

¹ Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China.

PMID: 21939241
DOI: 10.1021/ja2057874

Abstract

The possibility of utilizing the Si and Ge nanostructures to promote surface-enhanced Raman scattering (SERS) is discussed. The vibronic coupling of the conduction band and valence band states of Si or Ge with the excited and ground states of the target molecule during the charge transfer (CT) process could enhance the molecular polarizability tensor. Using H-terminated silicon nanowire (H-SiNW) and germanium nanotube (H-GeNT) arrays as substrates, significant Raman enhancement of the standard probes, Rodamine 6G (R6G), dye (Bu(4)N)(2)[Ru(dcbpyH)(2)-(NCS)(2)] (N719), and 4-aminothiophenol (PATP), are demonstrated. The abundant hydrogen atoms terminated on the surface of SiNW and GeNT arrays play a critical role in promoting efficient CT and enable the SERS effect.

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Germanium / chemistry*
Nanostructures / chemistry*
Particle Size
Photochemical Processes
Silicon / chemistry*
Spectrum Analysis, Raman
Surface Properties

Substances

Germanium
Silicon