High-performance ambipolar diketopyrrolopyrrole-thieno[3,2-b]thiophene copolymer field-effect transistors with balanced hole and electron mobilities

Zhuoying Chen; Mi Jung Lee; Raja Shahid Ashraf; Yun Gu; Sebastian Albert-Seifried; Martin Meedom Nielsen; Bob Schroeder; Thomas D Anthopoulos; Martin Heeney; Iain McCulloch; Henning Sirringhaus

doi:10.1002/adma.201102786

High-performance ambipolar diketopyrrolopyrrole-thieno[3,2-b]thiophene copolymer field-effect transistors with balanced hole and electron mobilities

Adv Mater. 2012 Feb 2;24(5):647-52. doi: 10.1002/adma.201102786. Epub 2011 Oct 14.

Authors

Zhuoying Chen¹, Mi Jung Lee, Raja Shahid Ashraf, Yun Gu, Sebastian Albert-Seifried, Martin Meedom Nielsen, Bob Schroeder, Thomas D Anthopoulos, Martin Heeney, Iain McCulloch, Henning Sirringhaus

Affiliation

¹ Cavendish Laboratory, Cambridge University, J J Thomson Avenue, Cambridge, CB3 0HE, UK.

PMID: 21997483
DOI: 10.1002/adma.201102786

Abstract

Ambipolar OFETs with balanced hole and electron field-effect mobilities both exceeding 1 cm(2) V(-1) s(-1) are achieved based on a single-solution-processed conjugated polymer, DPPT-TT, upon careful optimization of the device architecture, charge injection, and polymer processing. Such high-performance OFETs are promising for applications in ambipolar devices and integrated circuits, as well as model systems for fundamental studies.

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Electrons
Equipment Design
Polymers / chemistry*
Thiophenes / chemistry*
Transistors, Electronic*

Substances

Polymers
Thiophenes