Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor

Adv Mater. 2011 Dec 15;23(47):5633-40. doi: 10.1002/adma.201103379. Epub 2011 Nov 8.

Abstract

By employing a precise method for locating and directly imaging the active switching region in a resistive random access memory (RRAM) device, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta(2) O(5) is observed. Structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicate a unique resistance switching mechanism.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Electric Conductivity
  • Microscopy
  • Nanostructures / chemistry*
  • Nanostructures / ultrastructure
  • Nanotechnology / instrumentation
  • Nanotechnology / methods*
  • Oxides / chemistry*
  • Spectrum Analysis
  • Tantalum / chemistry*

Substances

  • Oxides
  • Tantalum
  • tantalum oxide