Impact of dispersion profiles of silicon waveguides on optical parametric amplification in the femtosecond regime

Opt Express. 2011 Nov 21;19(24):24730-7. doi: 10.1364/OE.19.024730.

Abstract

The impact of dispersion profiles of silicon waveguides on femtosecond optical parametric amplification (OPA) is theoretically investigated. It is found that flat quasi-phase-matching, smooth temporal profiles and separable spectra for 200 fs pulses can be obtained by tailoring the cross-section of silicon rib waveguide. We achieve on-chip parametric gain as high as 26.8 dB and idler conversion gain of 25.6 dB for a low pump peak power over a flat bandwidth of 400 nm in a 10-mm-long dispersion engineered silicon waveguide. Our on-chip OPA can find important potential applications in highly integrated optical circuits for all-optical ultrafast signal processing.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Amplifiers, Electronic*
  • Computer-Aided Design
  • Equipment Design
  • Equipment Failure Analysis
  • Light
  • Optical Devices*
  • Refractometry / instrumentation*
  • Scattering, Radiation
  • Silicon / chemistry*

Substances

  • Silicon