Fabrication of silicon oxide nanodots with an areal density beyond 1 teradots inch(-2)

Adv Mater. 2011 Dec 22;23(48):5755-61. doi: 10.1002/adma.201102964. Epub 2011 Nov 24.

Abstract

The combination of solvent annealing, surface reconstruction, and a tone-reversal etching procedure provides an attractive approach to utilize block copolymer (BCP) lithography to fabricate highly ordered and densely packed silicon oxide nano-dots on a surface. The obtained silicon oxide nano-dots feature an areal density of 1.3 teradots inch(-2) .

Publication types

  • Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

  • Acetic Acid / chemistry
  • Materials Testing
  • Microscopy, Atomic Force / methods
  • Microscopy, Electron, Scanning / methods
  • Nanoparticles / chemistry*
  • Nanotechnology / methods*
  • Particle Size
  • Polymers / chemistry*
  • Polystyrenes / chemistry
  • Salts / chemistry
  • Semiconductors
  • Silicon / chemistry
  • Silicon Dioxide / chemistry*
  • Solvents / chemistry
  • Surface Properties
  • Temperature

Substances

  • Polymers
  • Polystyrenes
  • Salts
  • Solvents
  • Silicon Dioxide
  • Acetic Acid
  • Silicon