Regenerable resistive switching in silicon oxide based nanojunctions

Massimiliano Cavallini; Zahra Hemmatian; Alberto Riminucci; Mirko Prezioso; Vittorio Morandi; Mauro Murgia

doi:10.1002/adma.201104301

Regenerable resistive switching in silicon oxide based nanojunctions

Adv Mater. 2012 Mar 2;24(9):1197-201. doi: 10.1002/adma.201104301.

Authors

Massimiliano Cavallini¹, Zahra Hemmatian, Alberto Riminucci, Mirko Prezioso, Vittorio Morandi, Mauro Murgia

Affiliation

¹ Consiglio Nazionale delle Ricerche-Istituto per lo Studio dei Materiali, Nanostrutturati (CNR-ISMN), Bologna, Italy. [email protected]

PMID: 22362565
DOI: 10.1002/adma.201104301

Abstract

A nanomemristor based on SiO(2) is fabricated in situ with spatial control at the nanoscale. The proposed system exhibits peculiar properties such as the possibility to be regenerated after being stressed or damaged and the possibility to expose the metal and the oxide interfaces by removing the top electrodes.

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Electric Impedance
Electrical Equipment and Supplies*
Electrodes
Equipment Design
Nanostructures / chemistry*
Nanostructures / ultrastructure
Silicon Dioxide / chemistry*

Substances

Silicon Dioxide