Resistive switching and magnetic modulation in cobalt-doped ZnO

Guang Chen; Cheng Song; Chao Chen; Shuang Gao; Fei Zeng; Feng Pan

doi:10.1002/adma.201201595

Resistive switching and magnetic modulation in cobalt-doped ZnO

Adv Mater. 2012 Jul 10;24(26):3515-20. doi: 10.1002/adma.201201595. Epub 2012 Jun 8.

Authors

Guang Chen¹, Cheng Song, Chao Chen, Shuang Gao, Fei Zeng, Feng Pan

Affiliation

¹ Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.

PMID: 22678882
DOI: 10.1002/adma.201201595

Abstract

A combination of resistive switching and magnetic modulation gives rise to the integration of room temperature ferromagnetism (spin) and electrical properties (charge) into a simple Pt/Co:ZnO/Pt structure due to the formation of oxygen vacancy-based conductive filaments. This is promising for broadening the applications of random access memories to encode quaternary information.

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Cobalt / chemistry*
Electric Impedance
Magnetic Phenomena*
Temperature
Zinc Oxide / chemistry*

Substances

Cobalt
Zinc Oxide