Remarkable enhancement of hole transport in top-gated N-type polymer field-effect transistors by a high-k dielectric for ambipolar electronic circuits

Adv Mater. 2012 Oct 23;24(40):5433-9. doi: 10.1002/adma.201201464. Epub 2012 Jul 9.

Abstract

A remarkable enhancement of p-channel properties is achieved in initially n-channel dominant ambipolar P(NDI2OD-T2) organic field-effect transistors (OFETs) by the use of the fluorinated high-k dielectric P(VDF-TrFE). An almost two orders of magnitude increase in hole mobility (~0.11 cm(2) V(-1) s(-1) ) originates from a strong interface modification at the semiconductor/dielectric interface, which provides high-performance complementary-like inverters and ring oscillator circuits.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Electrons
  • Fluorine / chemistry
  • Polymers / chemistry*
  • Polymethyl Methacrylate / chemistry
  • Quantum Theory
  • Transistors, Electronic*

Substances

  • Polymers
  • Fluorine
  • Polymethyl Methacrylate