High performance ambipolar field-effect transistor of random network carbon nanotubes

Satria Zulkarnaen Bisri; Jia Gao; Vladimir Derenskyi; Widianta Gomulya; Igor Iezhokin; Pavlo Gordiichuk; Andreas Herrmann; Maria Antonietta Loi

doi:10.1002/adma.201202699

High performance ambipolar field-effect transistor of random network carbon nanotubes

Adv Mater. 2012 Dec 4;24(46):6147-52. doi: 10.1002/adma.201202699. Epub 2012 Sep 24.

Authors

Satria Zulkarnaen Bisri¹, Jia Gao, Vladimir Derenskyi, Widianta Gomulya, Igor Iezhokin, Pavlo Gordiichuk, Andreas Herrmann, Maria Antonietta Loi

Affiliation

¹ Photophysics and Optoelectronics Group, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen 9747 AG, The Netherlands. [email protected]

PMID: 23001950
DOI: 10.1002/adma.201202699

Abstract

Ambipolar field-effect transistors of random network carbon nanotubes are fabricated from an enriched dispersion utilizing a conjugated polymer as the selective purifying medium. The devices exhibit high mobility values for both holes and electrons (3 cm(2) /V·s) with a high on/off ratio (10(6) ). The performance demonstrates the effectiveness of this process to purify semiconducting nanotubes and to remove the residual polymer.

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Electrons
Nanotubes, Carbon / chemistry*
Polymers / chemistry
Silicon Dioxide / chemistry
Transistors, Electronic*

Substances

Nanotubes, Carbon
Polymers
Silicon Dioxide