Neutral tetrathia[22]annulene[2.1.2.1] based field-effect transistors: improved on/off ratio defies ring puckering

Kamaljit Singh; Tarunpreet Singh Virk; Jing Zhang; Wei Xu; Daoben Zhu

doi:10.1039/c2cc37004b

Neutral tetrathia[22]annulene[2.1.2.1] based field-effect transistors: improved on/off ratio defies ring puckering

Chem Commun (Camb). 2012 Dec 28;48(100):12174-6. doi: 10.1039/c2cc37004b.

Authors

Kamaljit Singh¹, Tarunpreet Singh Virk, Jing Zhang, Wei Xu, Daoben Zhu

Affiliation

¹ Organic Synthesis Laboratory, Department of Applied Chemical Sciences and Technology, Guru Nanak Dev University, Amritsar 143005, India. [email protected]

PMID: 23147716
DOI: 10.1039/c2cc37004b

Abstract

New, neutral, slightly puckered aromatic meso-substituted tetrathia[22]annulene[2.1.2.1] macrocyclic architectures display p-type semiconductor behaviour and constitute molecular field-effect transistors with high on/off ratios (8.67 × 10(6)) and high mobility (0.23 cm(2) V(-1) s(-1)) in thin films deposited on octadecyltrichlorosilane (OTS) modified SiO(2).